Effect of low dose electron irradiation on AlGaAs/GaAs at low temperaturesZARDAS, G. E; HATZOPOULOS, Z; YANNAKOPOULOS, P. H et al.Physica status solidi. A. Applied research. 1989, Vol 114, Num 1, pp K41-K43, issn 0031-8965Article

An empirical model for primary sedimentation of sewageCHRISTOULAS, D. G; YANNAKOPOULOS, P. H; ANDREADAKIS, A. D et al.Environment international. 1998, Vol 24, Num 8, pp 925-934, issn 0160-4120Article

Temperature dependence of Si-GaAs energy gap using photoconductivity spectraZARDAS, G. E; YANNAKOPOULOS, P. H; ZISKA, M et al.Microelectronics journal. 2006, Vol 37, Num 2, pp 91-93, issn 0959-8324, 3 p.Article

Effects of Ionizing Radiation on Optoelectronic DevicesTSAKIRI, V. Th; SKOUNTZOS, A. P; YANNAKOPOULOS, P. H et al.Optoelectronic devices and properties. 2011, pp 103-124, isbn 978-953-307-204-3, 1Vol, 22 p.Book Chapter

Dependence of GaAs:Si persistent photoconductivity on temperature and α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; ZISKA, M et al.Microelectronics journal. 2005, Vol 36, Num 1, pp 1-4, issn 0959-8324, 4 p.Article

Electron irradiation induced defects in undoped and Te doped gallium phosphideZARDAS, G. E; SYMEONIDES, Ch. I; EUTHYMIOU, P. C et al.Solid state communications. 2008, Vol 145, Num 7-8, pp 332-336, issn 0038-1098, 5 p.Article

A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; SYMEONIDES, Chrys I et al.Microelectronics journal. 2008, Vol 39, Num 5, pp 737-739, issn 0959-8324, 3 p.Article

Effect of α-particle irradiation on AlGaAs/GaAs planar photoconductive detectors at low temperaturesZARDAS, G. E; EUTHYMIOU, P. C; SYMEONIDES, C et al.Physica status solidi. A. Applied research. 1992, Vol 133, Num 1, pp K49-K52, issn 0031-8965Article